The fine compositional fluctuation in a GaAs/Al x Ga1-x As superstructure grown by metal-organic chemical vapor deposition (MOCVD) was evaluated by using the composition analysis by thickness-fringe (CAT) method. A sinusoidally oscillating Al composition in the growth direction was observed to have a period of 1∼4 nm and in the range x=0.15 to 0.5. The CAT method was successfully applied to measure such fine compositional fluctuations with a high spacial resolution.
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Kakibayashi et al. (1987) studied this question.
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