A Circuit-Compatible Model of Ballistic Carbon Nanotube Field-Effect Transistors

Carbon nanotube field-effect transistors (CNFETs) are being extensively studied as possible successors to CMOS. Novel device structures have been fabricated and device simulators have been developed to estimate their performance in a sub-10-nm transistor era. This paper presents a novel method of circuit-compatible modeling of single-walled semiconducting CNFETs in their ultimate performance limit. For the first time, both the I-V and the C-V characteristics of the device have been efficiently modeled for circuit simulations. The model so developed has been used to simulate arithmetic and logic blocks using HSPICE.