Current transport modeling of carbon nanotube field effect transistors

In the present work, analytical modeling equations describing the current transport in carbon nanotube field effect transistors (CNT‐FETs) have been developed from physical electronics, which have strong dependence on the chiral vector and device geometries. These model equations for the CNT‐FETs have been compared with the available experimental data and then used to generate voltage transfer characteristics of basic logic devices based on complementary CNT‐FETs. The voltage transfer characteristics exhibit characteristics similar to the voltage transfer characteristics of standard CMOS logic devices, with a sharp transition near the logic threshold voltage depending on the input conditions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)