Phonon conductivity of doped germanium under uniaxial stress in the [110] direction

The relaxation-rate expressions for elastic, inelastic, and absorption phonon-electron processes in n-type germanium have been derived under [110] directional uniaxial tension. Using these expressions, the phonon conductivity of Sb-doped Ge under tension is evaluated and compared with the experimental results given by Keyes and Sladek. It is found that a slight increase of Bohr radii of the upper two levels of the donor ground states and decrease of shear deformation potential Eᵤ with stress can give better agreement with the experimental results. This work suggests that the theory of electron-phonon interaction is not a failure, as suspected by earlier workers.