Influence of nitrogen-related defects on optical and electrical behaviour in HfO2−xNx deposited by high-power impulse magnetron sputtering

HfO2−xNx films have been deposited by high-power impulse magnetron sputtering in an Ar-O2-N2 atmosphere with a series of nitrogen partial pressures. X-ray absorption spectroscopy revealed the optimum deposition conditions required to passivate O vacancies in the HfO2−xNx films by nitrogen. Low-mobility interstitial species prevent crystallisation of nitrogen-incorporated films. These effects combine to remove leakage paths resulting in superior breakdown strengths compared to films deposited without nitrogen. The bandgap was maintained at ∼5.9 eV in the films in which nitrogen passivated the oxygen vacancies. This is essential to provide sufficient band offsets for HfO2−xNx films to be used an effective gate dielectric.