Al 2 O 3 thin films were deposited by reduced‐pressure CVD using aluminum tri‐isopropoxide as a source. The dependence of the growth rate on the substrate temperature and the source gas supply was determined. The activation energy of the decomposition reactions was determined to be 18 kcal/mol. The electrical resistivity and the dielectric properties are characterized. The origin of the frequency dispersion in the sample prepared under the surface reaction limited conditions are discussed.
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Saraie et al. (1985) studied this question.