In a sputtering system, etching rates of the target both by ions and by energetic neutrals have been numerically calculated for various sputtering conditions. The calculated result shows that the ratio of sputtering rate due to neutrals to the total sputtering rate is about 30% at the maximum. Bombardment of the target-shield by neutrals causes serious contamination problems in deposited films. Impurities were analyzed for titanium films deposited by two different systems and considerable amounts of Fe and Ni were detected. To confirm the sputtering of the targetshield by energetic neutrals, the influence of a locally overhanging copper shield on the deposition characteristics was examined in the rf sputtering of a quartz target.
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Naokichi Hosokawa (1979) studied this question.
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