Thin films produced by plasma-enhanced chemical vapor deposition (PECVD) have potential application as conformal coatings on implantable devices with complex topologies and small dimensions. Coatings on such devices need to be biocompatible, insulating, and flexible enough to minimize static forces on the surrounding tissue. In this study, we describe the use of pulsed-PECVD to deposit thin films from hexamethylcyclotrisiloxane (D 3 ). Pulsed-PECVD is a method in which plasma excitation is modulated to favor deposition from neutral and radical species. Thin, conformal coatings were demonstrated on nonplanar substrates suitable for implantation, such as copper wires and neural probes. Coatings were resistant to prolonged immersion in warm saline solution, and wire coatings produced by pulsed-PECVD showed more flexibility than analogous coatings deposited by continuous-wave (CW) excitation. Using Fourier transform infrared spectroscopy, it was demonstrated that the mode of plasma excitation is important in determining film structure. Both CW and pulsed-PECVD showed evidence of cross-linking via ternary and quaternary silicon atoms bonded to more than two oxygen atoms. Methylene groups were observed only in CW films, and may constitute part of a carbon cross-linking unit of the form Si(CH 2 ) n Si, where n ≥ 1. Methylene was not detectable in the pulsed-PECVD films, suggesting that formation of carbon cross-links requires a longer plasma decomposition period. The presence of two distinct cross-linking structures in CW films leads to a highly networked structure and results in brittle coatings on thin wires. A higher proportion of terminal methyl groups was also observed in CW films, suggesting that pulsed-PECVD films may retain more precursor ring structure than CW films.
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Lewis et al. (2000) studied this question.
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