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We demonstrate a near-infrared integrated optical parametric oscillator (OPO) in a direct gap semiconductor. Based on a selectively oxidized GaAs/AlGaAs waveguide and monolithic SiO2/TiO2 dichroic Bragg mirrors, this device combines a strong non-resonant quadratic nonlinearity and form-birefringent type-I phase matching. With a TM00 pump around 1 μm and TE00 signal and idler around 2 μm in a single-pass-pump doubly resonant scheme, we observe an oscillation threshold of 210 mW at degeneracy in the continuous-wave regime. This result represents a significant milestone in the perspective of an electrically injected OPO on chip.
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Savanier et al. (2013) studied this question.
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