Sub‐5‐nm Gaps Prepared by On‐Wire Lithography: Correlating Gap Size with Electrical Transport

OWL – a wise choice: On-wire lithography (OWL) has been used to fabricate 2.5-nm gaps in high yield in Au nanowires. Current–voltage measurements of the gaps show tunneling transport behavior and calculated gap sizes that match those determined by electron microscopy (see figure). Such gaps prepared by OWL can be utilized to make measurements on nanomaterials, and even on single molecules.