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We have demonstrated the fabrication of a thermoelectric energy harvesting device via laser-induced forward transfer of intact solid thin films. Thermoelectric chalcogenide materials, namely bismuth telluride (Bi2Te3), bismuth selenide (Bi2Se3) and bismuth antimony telluride (Bi0:5Sb1:5Te3), were sequentially printed using a nanosecond excimer laser onto an elastomeric polydimethylsiloxane-coated glass substrate to form thermocouples connected in series creating a thermoelectric generator. The resulting generator Seebeck coefficient and series resistance per leg pair were measured to be 0.17 mV K-1 and 10 kilohms respectively. It was shown that laser-induced forward transfer allows device fabrication from inorganic semiconductor compounds on inexpensive elastic polymer substrates and demonstrates the ability to print materials with pre-defined thermoelectric properties. This allows the rapid manufacturing of a complete thermoelectric device on mm2-areas with µm-scale precision, without the need of further lithographic steps.
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Feinaeugle et al. (2013) studied this question.
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