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We describe a novel soft-lithographic technique possessing broad utility for the fabrication of large area, nanoscale ( approximately 100 nm) multilayer resist structures on electronic material substrates. This additive patterning method transfers ultrathin poly(dimethylsiloxane) (PDMS) decals to an underlying SiO(2)-capped organic planarazation layer. The PDMS patterns serve as a latent image through which high-quality multilayer resist structures can be developed using reactive ion-beam etching.
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Ahn et al. (2005) studied this question.
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