Misfit dislocations in [001] GaAs/In0.25Ga0.75As/GaAs multiquantum well heterostructures are studied by transmission electron microscopy. Two sets of misfit dislocation networks have been observed; one is a set of conventional 60° misfit dislocations lying along 〈110〉, and the other is a set of edge dislocations lying along 〈100〉. The location of these misfit dislocations with respect to the strained layers is investigated. A qualitative explanation for the generation mechanism of the misfit dislocations lying along 〈100〉 is given.
No takes yet. Share an insight, caveat, or question.
Zou et al. (1994) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: