Dielectric and physical properties of N2O-oxynitrided (RTON) ultrathin (5-10 nm) SiO2 films formed by in situ multiple rapid thermal processing have been investigated. In high-field stressing under positive and negative polarity biases, the RTON SiO2 films showed a much lower electron-trap generation rate, a lower field-induced leakage current and a higher charge-to-breakdown value, as compared to those of pure SiO2 and rapid thermally NH3-nitrided (RTN) SiO2 films. Fourier transform-infrared reflection attenuated total reflectance (FT-IR ATR) and X-ray photoelectron spectroscopy (XPS) results showed that strong Si-N bonds are formed at the SiO2/Si interface by RTON, whereas a large number of N-H and Si-H bonds, which act as electron traps, are also generated by RTN.
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Yasuda et al. (1991) studied this question.
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