We have successfully fabricated two-dimensional InGaN-based 12 × 12 micro-light emitting diode (LED) arrays with individually addressable emitters having diameters of 8 and 12 μm. A new planarisation scheme including gap-filling with plasma enhanced chemical vapour deposition (PECVD) SiO2 and a chemical–mechanical polishing process was successfully developed for the electrical isolation of individual diodes. The uniformity of elements within an array was demonstrated through their electroluminescence and I–V characteristics.
No takes yet. Share an insight, caveat, or question.
Jeon et al. (2002) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: