Abstract—An approach for the microwave nonlinear device modeling technique based on a combination of the conventional equivalent circuit model and support vector machine (SVM) regression is presented in this paper. The intrinsic nonlinear circuit elements are represented by Taylor series expansions, coefficients of which are predicted by its support vector regression (SVR) model. Example of a SiC MESFET nonlinear model is demonstrated, and good results is achieved. 1.
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Xu et al. (2008) studied this question.
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