InAlGaAs in combination with InP, InGaAs, and InAlAs is an attractive material for long wavelength applications. Reactive ion etching of InP/InAlGaAs/InGaAs heterostructures using plasma is systematically investigated and optimization is obtained. The etching process is investigated as a function of radio‐frequency power density and total pressure and its results are characterized in terms of etch rate, surface‐roughness, and etch profile. Etch conditions for the smooth and reproducable etching of Al‐containing heterostructures are reported. The quality of the results achieved is reflected by excellent quality epitaxial InP overgrowth.
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Lemm et al. (1997) studied this question.