We have carried out a transmission electron microscopy based study of AlGaAs–Al(oxide) heterolayers created by lateral sidewall wet oxidation and identify the oxide phase formed as a consequence of the oxidation of AlAs to be γ-Al2O3, with the cubic Fd 3m structure. The oxide-semiconductor interface is weak and porous, possibly due to the high stress loads developed during oxidation, and we propose that the fast oxidation rates are a consequence of reactants transported to the oxidation front along the porous interface.
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Guha et al. (1996) studied this question.