The various model parameters involved in an HBT large‐signal model based on the Ebers‐Moll topology have been extracted from noise measurements, pulsed I‐V characterizations, and S‐parameter measurements. Using this model a good correlation has been established between the estimated and measured output power variations versus the input power of a GaAlAs/GaAs HBT.
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Dlenot et al. (1994) studied this question.
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