Strained In1−xGaxAs epilayers over a wide range of x values from 0.252 to 0.762 have been grown by chemical beam epitaxy on heavily doped InP(100) substrates. The infrared p-polarized reflectivity of these samples has been measured and the first derivative of the reflectance has been analyzed using a specially developed fitting technique. Expressions for the variation of the phonon frequencies with Ga fraction for the InAs-like and GaAs-like modes have been obtained. The present results substantially improve on earlier results obtained from epilayers on semi-insulating substrates having a narrower concentration range around x=0.468 where In1−xGaxAs is lattice matched to InP.
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Yu et al. (2005) studied this question.
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