We observe modification of the spontaneous emission spectrum emitted through the substrate of a quantum well semiconductor laser. The effect is driven by the proximity of the quantum well active region to the p-side electrical contact of the device, representing an excellent example of cavity quantum electrodynamics. Modification of the spontaneous emission rate and spectrum can be substantial; it must be accounted for in order to infer modal gain or carrier heating phenomena in the device correctly.
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Wright et al. (1997) studied this question.
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