A vertical injection, light emitting InGaN quantum well diode has been demonstrated by separating the nitride heterostructure from its sapphire substrate by ultraviolet laser photoablation within a process scheme that allows transferring the devices to a host substrate. The incorporation of a dielectric multilayer stack to the device is shown to be a first practical step towards a resonant cavity light emitting diode.
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Song et al. (1999) studied this question.
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