We have demonstrated second-harmonic generation in a GaAs/AlAs vertical cavity grown on a (311)B GaAs substrate. Second-harmonic light of 492 nm was observed and its efficiency was measured to be 1.4×10−4 %/W. The cavity confines high intensity of fundamental field, resulting in efficient second-harmonic generation. Quasiphase matching was realized with the stacked GaAs/AlAs layers inside the cavity, which was designed taking into account the strong absorption of second-harmonic power in GaAs layers. We show that conversion efficiency of the GaAs/AlAs vertical cavity could be more than 10%/W if the optimization is completed.
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Nakagawa et al. (1995) studied this question.