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A modified hot-wall epitaxy (HWE) system for the growth of multiple heterolayers is described which consists of two identical HWE furnaces. The substrate furnaces are mounted on a rotatable plate which allows the growth of heterolayers under nearly identical conditions for each individual layer. Single layers and multilayer heterostructures of the PbTe/Pb1−xSnxTe system were grown with this apparatus and typical results are presented.
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Clemens et al. (1983) studied this question.
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