Schottky contacts to the p-type InP have been fabricated and their electrical characteristics have been measured. The barrier height more than 0.8 eV are obtained with the contacts to the low work function metal such as Al, In, Sn and Sb. The barrier height is dependent upon the metal work function under the given metals. The surface state density is estimated to be 3.4 × 10 12 cm -2 eV -1 from the barrier height versus the metal work function plot. The open circuit voltage and the energy conversion efficiency of the p-type InP Schottky barrier solar cell are 0.595 V and 8.2% under AM2 condition.
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Kamimura et al. (1980) studied this question.