Growth of analog AlxGa1−xAs/GaAs parabolic quantum wells by molecular beam epitaxy

Parabolic AlxGa1−xAs/GaAs quantum wells have been grown by molecular beam epitaxy with linear ramping of the Al effusion cell temperature, where the ramping rate was carefully analyzed to avoid a flux lag. The calculated potential profile from the temperature variation was very close to the parabolic one. Low-temperature photoluminescence showed clear interband transitions up to the n=3 sublevels. The equal energy spacing between adjacent transitions involving heavy-hole states confirmed the parabolic shape of the quantum well.