We report the fabrication of low-droop high-efficiency green c -plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n ++ -GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm 2 , the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.
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Alhassan et al. (2018) studied this question.