To increase the sensitivity of high speed GaAs based metal-semiconductor-metal (MSM) photodetectors, thin film inverted MSMs (fingers on the bottom) have been fabricated and compared to bulk MSMs. The inverted MSMs exhibit a record 95% external quantum efficiency, a bandwidth of 5.9 GHz, and <5 nA dark current at 10 V bias.
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Vendier et al. (1996) studied this question.
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