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Effects of Al composition on luminescence properties corresponding to Tb3+ inner level transitions are investigated. When the Al composition is larger than 0.3, luminescence corresponding to 5D4–7FJ (J = 3, 4, 5, 6) transitions is observed at room temperature, while 5D3–7FJ transition such as 5D3–7F5 can be observed only at low temperature. As the Al composition increases, the luminescence intensity is increased super linearly at first, and then linearly increased. Thermal quenching of luminescence intensity is dramatically improved as increasing the Al composition. Major effect of AlGaN is well explained by reduction of energy‐back‐transfer process. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Wakahara et al. (2005) studied this question.
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