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The etching behavior of as-grown and heat-treated silicon crystals has been studied using an etching procedure developed by Dash. The rate of chemical etching of silicon was found to decrease with increased concentration of dissolved oxygen. This effect impedes the formation of etch-pits. To explain the observed etching behavior after heat treatment it is necessary to assume that the rate of chemical etching increases with increased amount of precipitated oxygen in pulled crystals.
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Logan et al. (1957) studied this question.
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