Answers are grounded in this paper and cite their sources.
An optically transparent emitter InP/InGaAs heterojunction phototransistor (HPT) fabricated using Indium Tin Oxide (ITO) as the ohmic contact is presented for the first time; these devices show similar electrical characteristics to their opaque emitter counterparts and enhanced optical responsivities (5.4 A/W at 780 nm wavelength). Measured spectral response suggests responsivities of up to 30 A/W and 22 A/W at /spl lambda/=1310 nm and 1550 nm respectively.>
No takes yet. Share an insight, caveat, or question.
Bashar et al. (1995) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: