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The characteristics of InP APDs fabricated by cadmium and zinc diffusion have been investigated. The Cd-diffused InP APD exhibited an avalanche gain in excess of 10 3 , whereas the Zn-diffused InP APD exhibited prebreakdown phenomena with an avalanche gain as low as 2. This result has been correlated to the difference in the diffusion front shapes between these impurities in InP.
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Takanashi et al. (1980) studied this question.
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