Characteristics of a pentacene thin film transistor with periodic groove patterned poly(methylmethacrylate) dielectrics

Soft contact lamination enabled to assess the effects of angle variation of the periodic groove patterns on the same pentacene thin film transistors with a 140 nm periodic groove patterned dielectric layer. An angle was formed when the source-drain current and the groove direction of the dielectric layer were crossed. As the angle decreased from 90° to 0°, the current-output and carrier mobility increased and the threshold voltage of the device was shifted. Since pentacene molecules were oriented by the periodic groove patterns formed on the dielectric layer, the current-output and carrier mobility increased as the angle decreased.