Silicon Self-Diffusion in Quartz

³⁰Si diffusion was measured in quartz along c axis in the β-phase field, at T0ex0ex=0ex0ex1400-- 1600^∘C by Rutherford backscattering spectrometry and the ³⁰Si(p,γ)³¹P resonant nuclear reaction. The diffusion coefficient $D({cm}²{s}^{{-}1}){{{0ex}{0ex}}={{0ex}{0ex}}10}^{(6.1±{}2.7)}exp[({-}7.6±{}1eV)/kT]$, comparable to $D$ of silicon in vitreous ${SiO}₂$. We suggest Frenkel pairs as majority defects with diffusion occurring by interstitial mechanism.