Fabrication of SnO2:As/SiO2/n-Si (textured) (semiconductor/insulator/semiconductor) solar cells by chemical vapor deposition

Semiconductor/insulator/semiconductor solar cells having AM 1 efficiency of 14.5% on single silicon crystal were fabricated. The arsenic-doped tin oxide films were deposited by the chemical vapor deposition technique on heated n-Si substrate with 〈100〉 orientation having a resistivity of 0.1 Ω cm. Before the deposition of SnO2:As the wafers were made textured and the SiO2 layer was chemically grown on the Si surface. The capacitance-voltage measurement at 1-kHz frequency shows the abrupt nature of the junction with built-in voltage Vd = 0.77 V. The variation of dark current density–voltage characteristics with temperatures was also studied.