The gain characteristics of high Al-content AlGaN-delta-GaN quantum wells (QWs) are investigated for mid- and deep-ultraviolet (UV) lasers. The insertion of an ultrathin GaN layer in high Al-content AlGaN QWs leads to valence subbands rearrangement, which in turn results in large optical gain for mid- and deep-UV lasers.
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Zhang et al. (2011) studied this question.
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