We have produced AlxGa1−xAs-AlAs quantum well p-i-n diode electroabsorption modulators with x as high as 0.56. Even though the material is indirect in momentum space, strong excitonic absorption exists at the direct band gap which can be modulated with an applied field. For x=0.33, 0.43 and 0.56, we measure relative transmission changes (ΔT/T0, in a surface-normal configuration) of 62%, 51%, and 23%, respectively, at wavelengths of 677, 622, and 575 nm for 15 V bias with the intrinsic layer being 0.6 μm thick.
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Goossen et al. (1991) studied this question.
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