Five new phenoxazine-based conjugated polymers, including poly(10-hexylphenoxazine-3,7-diyl), poly(10-hexylphenoxazine-3,7-diyl- alt -9,9-dihexyl-2,7-fluorene), and poly(10-hexylphenoxazine-3,7-diyl- alt -3-hexyl-2,5-thiophene), were synthesized, characterized, and successfully used as p-channel semiconductors in organic field-effect transistors. The polymers have high glass transition temperatures in the 112−230 °C range. The phenoxazine-based polymers have low ionization potentials or high-lying HOMO levels (4.8−4.9 eV), which were estimated from cyclic voltammetry. Organic field-effect transistors based on the phenoxazine polymer semiconductors have a field effect hole mobility of up to 6 × 10 -4 cm 2 /(V s) and an on/off ratio of up to 10 4 . These results demonstrate that phenoxazine-based conjugated polymers are promising p-type semiconductors for solution processable thin film transistors.
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Zhu et al. (2005) studied this question.
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