The electrical effects of included silicon carbide (SiC) particles in edge-defined film-fed grown silicon ribbons have been examined. By employing a scanning electron microscope operated in the electron-beam-induced current mode, as well as observing the effects of SiC particles on solar-cell characteristics, the electrical activity of particles and particle-generated defects were studied. The influence of SiC particles largely appears to be a result of impurity accumulation around them rather than a direct effect of the inclusions.
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Rao et al. (1976) studied this question.
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