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Homo- and heteroepitaxial layers of GaAs were examined by transmission electron microscopy. The epitaxial layers contained four types of defects. These were intrinsic stacking faults, extrinsic faulted loops, dislocations, and precipitates. It is shown that, of these defects, the ones most responsible for limiting the minority-carrier diffusion length are stacking faults.
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Abrahams et al. (1971) studied this question.
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