30 nm resolution zero proximity lithography on high-Z substrates

In order to fabricate masks for x-ray lithography, there is growing interest in subtractive patterning of high atomic mass (high-Z) materials such as tungsten or gold. Favorable writing speeds and sub-50 nm resolution without proximity effects combine to make heavy ion focused ion beam lithography an ideal candidate for this area of nanofabrication. Using a 50 keV Ga+ beam with an 8 nm spot diameter, we have exposed a variety of proximity effect test patterns in 60 nm thick PMMA on 0.5 μm thick tungsten films. The results indicate that 30-nm resolution or better is possible at line/space pitches as small as 80 nm. The test patterns show no apparent proximity effects at these dimensions. An anomalous ‘‘inverse proximity effect’’ was observed, and was determined to be an artifact of the scanning electron microscope technique used to observe the PMMA resist.