Partially oriented and highly textured diamond films on Si(111) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5 x 10(8) cm(-2) was realized in 3 min by near-surface glow discharge. The as-grown films were characterized. by scanning electron microscopy (SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H-2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond(111) surface was demonstrated to be in Stranski-Krastanov model by SEM.
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Jin et al. (1999) studied this question.
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