A variety of oxygen-related micro-defects (spherical and octahedral precipitates, their agglomerations, dislocations and dislocation loops) with dimensions in the range 0.1-100 mu m were revealed using X-ray topography and transmission electron microscopy after two-step annealing of Czochralski-grown silicon. The defects are distributed in a non-uniform way across the samples with the gradient of their density normal to the crystal surface.
No takes yet. Share an insight, caveat, or question.
Lefeld‐Sosnowska et al. (1995) studied this question.