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June 1, 1968IEEE Transactions on Electron Devices

Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

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HNH.C. NathansonNorthrop Grumman (United States)CJC. JundJGJ. GrosvaletCentre de Recherche en Technologie des Semi-conducteurs pour l’Energétique

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Nathanson et al. (1968) studied this question.

synapsesocial.com/papers/6a95dabfa2632ed507d7aa56https://doi.org/10.1109/t-ed.1968.16191
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