Crystallization rates were measured in vacuum, dry nitrogen, and water‐saturated nitrogen atmospheres from 1300° to 1540°C. In all cases the observed rates were linear. Three reactions appeared to contribute to crystallization: the intrinsic crystallization, the impurity effect of H 2 O vapor, and furnace contamination. Enhancement of crystallization by both water vapor and furnace contamination is attributed to the breaking of silicon—oxygen bonds of the glass structure. Competitive adsorption mechanisms were proposed to characterize the adsorption of water and impurity species. The activation energy for apparent intrinsic crystallization was 134 kcal/mole; the activation energy for crystallization in H 2 O vapor was 77 kcal/mole.
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Wagstaff et al. (1966) studied this question.
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