Dislocation energy levels in deformed silicon

Abstract‐Energy levels in deformed silicon have been directly measured by transient junction capacitance techniques. If complex slip band formation is not suppressed, a large variety of states are observed after deformation with a prominent state at Ev − 0.68 ev. After annealing at 900°C the complex defect spectra simplify to two dominant states at Ev + 0.35 ev and Ec − 0.38 ev. In more homogeneously deformed silicon where slip band formation is suppressed, the dominant state at Ec − 0.68 ev is not observed after deformation and the spectra resembles that obtained after annealing the complex spectra at 900°C.