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January 1, 2017Nanoscale46 citations

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers

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DCDezhong CaoHXHongdi XiaoQGQingxue Gao

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Abstract

The mesoporous GaN-based thin films were transferred onto quartz and n-Si substrates. Compared to the film on quartz substrate, the film on n-Si substrate exhibited better photoelectrochemical performance.

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Cite This Study

Cao et al. (2017) studied this question.

synapsesocial.com/papers/6a95dd4012aa3e1f18410f3dhttps://doi.org/10.1039/c7nr03622a
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