Laser diodes with the multilayer heterostructure have been observed in cathodoluminescence (CL) images using an analytical color fluorescence electron microscope. An AlGalnP/GalnP chip, which is commercially available as 670 run red laser diode, emits red CL from a part of the p-AlGalnP layer just above the p-GalnP layer and between the n-GaAs blocking layers. A chip that has no blocking layers emits only very weak red CL, which indicates the strong relation of CL with laser emission. In images of a CdZnSe/ZnSe diode that emits 530 run blue laser light at room temperature, a blue CL emission appears which is much stronger in the n-type region, in particular in the n-ZnSSe cladding layer, than in the p-type region. Fade-out of the blue CL and/or appearance of yellow-red emission take place in the area including dislocations.
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Saijo et al. (1994) studied this question.