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Large arrays of dense, site-controlled InGaAs/GaAs quantum dots (QDs) are grown by organometallic chemical vapor deposition in an ordered pattern of tetrahedral recesses (pyramids). These QDs exhibit a low inhomogeneous broadening (≈1 meV), large s–p separation (>50 meV), and efficient single-photon emission.
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Mohan et al. (2010) studied this question.
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