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The continually increasing, widespread use of integrated circuits requires improved isolation techniques and characteristics beyond those obtainable with p‐n junctions. Junction isolated planar circuits have several limitations that dielectric isolation (DI) can substantially impact. For example, DI allows increased packing density, eliminates unwanted SCR action with the substrate (particularly important in cross points and radiation hardened devices), and provides higher collector‐base breakdown voltages. Unfortunately, such structures also have some limitations such as cost and manufacturing process problems. The advantages, problems, and future projections of DI circuit manufacturing are discussed following a review of the semiconductor industry's current DI processing technology.
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Bean et al. (1977) studied this question.
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